Specific Process Knowledge/Etch/ICP Metal Etcher/Aluminium

From LabAdviser
Revision as of 15:11, 2 February 2023 by Jmli (talk | contribs) (→‎Al etch information supplied from STS)
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)

Feedback to this page: click here

Aluminium etch

Unless otherwise stated, all content on this page was created by Jonas Michael-Lindhard, DTU Nanolab

The aluminium etch has two steps:

Breakthrough
The breakthrough step is designed to break through the native aluminium oxide layer that is present on all aluminium surfaces. The duration of this step should remain fixed.
Main
The main step etches bulk aluminium.
Al etch
Parameter Process step
Breakthrough Main
Time (secs) 20 40 (variable)
HBr (sccm) - 15
Cl2 (sccm) 20 25
Pressure (mTorr) 2, Strike 3 sec@5 mTorr 1
Coil power (W) 600 500
Platen power (W) 125 100
Temperature (oC) 20 20
Spacers (mm) 30 30
Results
Etch rate ~350 nm/min (depending on features size and etch load)


Al etch made by Chantal Silvetre@nanolab October 2014
Parameter Process step
Breakthrough Main
Time (secs) 20 40 (variable)
HBr (sccm) - 15
Cl2 (sccm) 20 25
Pressure (mTorr) 2, Strike 3 secs @ 6 mTorr 1
Coil power (W) 600 500
Platen power (W) 125 100
Temperature (oC) 20 20
Spacers (mm) 100 100
Results
Etch rate ~282 nm/min (depending on features size and etch load)