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Pattern preparation for exposure on JEOL 9500

Prior to exposure a pattern must be prepared for exposure. The original pattern must be provided in GDS format. Depending on requirements and complexity level pattern preparation will involve all or subset of the following steps.

Alignment preparation
Bulk and sleeve separation
Proximity Effect Correction
Pattern fracturing
Field sorting
Export for writing

Alignment preparation

If an exposure is first print on the substrate and there is no further EBL steps on the substrate, i.e. no EBL alignment, this step can be skipped.

If alignment is needed it is vital to consider this already at the process design and mask design level to ensure that a visible mark is produced. Alignment is done using the electron beam in either SEM mode or beam scan mode. In SEM mode the stage is moved to the expected alignment mark position and the user will manually observe the SEM image and adjust stage position to center the mark. In beam scan mode the user sets up a routine that will scan the beam across the expected mark position and the Backscatter Electron Detector (BED) will detect the backscattered signal.