Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Slow etch
The slow etch
This work is done by Berit Herstrøm @Nanolab.dtu, is nothing else is stated The slow etch is designed to etch slow at low powers to etch thin films and to avoid overheating of samples mounted on a carrier with Capton/polyimide tape
| Parameter | Recipe name: Slow Etch | Recipe name: Slow Etch2 |
|---|---|---|
| Coil Power [W] | 350 | 200 |
| Platen Power [W] | 25 | 50 |
| Platen temperature [oC] | 20 | 20 |
| H2 flow [sccm] | 15 | 15 |
| CF4 flow [sccm] | 30 | 30 |
| Pressure [mTorr] | 3 | 10 |
| Typical results | Slow Etch | Slow Etch2 |
|---|---|---|
| Etch of SRN | ~43nm/min [measured 39-50 nm/min over a 6" wafer] | |
| Etch rate of Si3N4 | ~49nm/min [4" on carrier] | |
| Etch rate of SiO2 | ~42nm/min [41-43 nm/min over a 6" wafer] | |
| Etch rate of Mir resist] | ~nm/min | |
| Tested etch time without burning the resist | 3 min | 30 min |
| Profile [o] |
- Map of etch rate measurements for 'Slow Etch'
-
Etch rate map of SiO2 etch on 6" wafer -
Etch rate map of SRN etch on 6" wafer
