Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Slow etch
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The slow etch
The slow etch is designed to etch slow at low powers to etch thin films and to avoid overheating of samples mounted on a carrier with Capton/polyimide tape
Parameter | Recipe name: Slow Etch | Recipe name: Slow Etch2 |
---|---|---|
Coil Power [W] | 350 | 200 |
Platen Power [W] | 25 | 50 |
Platen temperature [oC] | 20 | 20 |
H2 flow [sccm] | 15 | 15 |
CF4 flow [sccm] | 30 | 30 |
Pressure [mTorr] | 3 | 10 |
Typical results | Slow Etch | Slow Etch2 |
---|---|---|
Etch of SRN | ~43nm/min [measured 39-50 nm/min over a 6" wafer] | |
Etch rate of Si3N4 | ~49nm/min [4" on carrier] | |
Etch rate of SiO2 | ~42nm/min [41-43 nm/min over a 6" wafer] | |
Etch rate of DUV resist] | ~nm/min |
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Profile [o] |
- Map of etch rate measurements