Date
|
Substrate Information
|
Process Information
|
Results
|
Wafer info
|
Material/ Exposed area
|
Condi- tioning
|
Recipe
|
Wafer ID
|
Comments
|
SEM images
|
Picoscope
|
Numbers
|
16/6-2021
|
150 mm wafer with standard DUV resist and PegReticle pattern
|
Si / 25-50%
|
C06692.03 pegreticle wafer
|
nanolab/ jmli / DREM / DREM 0.5kW v2.3, 50 cycles or 4:35 minutes
|
C06694.01
|
Process log entry
|
|
|
SEM image:
|
c155
|
c157
|
c153
|
Trench width (um) |
0.21 |
0.79 |
0.84
|
Etched depth (um) |
1.08 |
1.27 |
1.41
|
Etch rate (um/min) |
0.24 |
0.28 |
0.31
|
Etch rate (nm/cyc) |
21.61 |
25.46 |
28.14
|
Sidewall bowing (%) |
0 |
1 |
0
|
Sidewall angle (degs) |
90.31 |
90.19 |
90.3
|
Bottom bowing (%) |
40.66 |
22.98 |
21.46
|
Aspect ratio |
5.04 |
1.6 |
1.67
|
|
16/6-2021
|
150 mm wafer with standard DUV resist and a pattern of pillars of variable densities/widths
|
Si / 10%
|
C06695.14
|
nanolab/ vy / DREM / DREM 0.5 kW v2.3 75 cyc or 6:52.5 mins
|
C06694.01
|
Process log entry
|
|
|
SEM image:
|
Trench width (um)
|
Etched depth (um)
|
Etch rate (um/min)
|
Etch rate (nm/cyc)
|
Sidewall bowing (%)
|
Sidewall angle (degs)
|
Bottom bowing (%)
|
Aspect ratio
|
|
27/9-2021
|
DUV litho wafer,
|
Si / 25-50%
|
C06873.01
|
nanolab/ jmli / DREM / DREM 0.5kW peg3, 100 cycles or 9:10 minutes
|
C06873.02
|
30 sec O2 0.2kW barcProcess log entry
|
|
|
SEM image:
|
c157
|
c158
|
c159
|
c161
|
c162
|
c160
|
c156
|
c163
|
Trench width (um) |
0.17 |
0.22 |
0.25 |
0.42 |
0.43 |
0.52 |
0.55 |
2.03
|
Etched depth (um) |
1.3 |
1.36 |
1.4 |
1.56 |
1.57 |
1.62 |
1.64 |
1.87
|
Etch rate (um/min) |
0.14 |
0.15 |
0.15 |
0.17 |
0.17 |
0.18 |
0.18 |
0.2
|
Etch rate (nm/cyc) |
13 |
14 |
14 |
16 |
16 |
16 |
16 |
19
|
Sidewall bowing (%) |
0 |
0.2 |
0.2 |
0.3 |
0.4 |
0.1 |
-0.1 |
0.1
|
Sidewall angle (degs) |
89.38 |
89.33 |
89.41 |
89.29 |
89.43 |
89.44 |
89.4 |
89.21
|
Bottom bowing (%) |
34.34 |
24.69 |
27.76 |
23.55 |
22.1 |
20.81 |
23.56 |
11.77
|
Aspect ratio |
8.11 |
6.63 |
5.94 |
3.85 |
3.77 |
3.22 |
3.1 |
0.93
|
|