Specific Process Knowledge/Thin film deposition/Deposition of AZO
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AZO can be deposited by sputtering or atomic layer deposition (ALD). In sputter-deposition of AZO, we use an AZO target that may be RF-sputtered or reactively DC-sputtered. You can also co-deposit Al and ZnO. Note that in multipurpose sputter systems such as ours it may be difficult to obtain low enough contamination for high-quality AZO. Talk to Nanolab staff or your colleagues if you would like to locate a sputter system that can be dedicated to AZO-deposition.
In the chart below you can compare the different deposition equipment available here at Nanolab:
Sputter deposition Sputter-system Metal-Oxide(PC1) | Sputter deposition (Sputter-System(Lesker)) | Atomic layer deposition (ALD Picosun R200) | |
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General description |
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Pre-clean | RF Ar clean | RF Ar clean | |
Layer thickness | few nm to ? hundreds of nm* | 10Å to 5000Å* | 0 to 1000 Å |
Deposition rate | Depending on process parameters. | Depending on process parameters, e.g., 0.3 Å/s reactive DC-sputtering (see process log for details) | Depending on temperature |
Batch size |
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Allowed materials |
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Comment |
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* For thicknesses above 200 nm permission is required. Write to thinfilm@nanolab.dtu.dk.