Specific Process Knowledge/Thin film deposition/Deposition of Aluminium Nitride
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Deposition of Aluminium Nitride
AlN films can be deposited by sputtering or by atomic layer deposition (ALD).
In the sputter systems AlN can be either deposited by direct sputtering of an AlN target or reactive sputtering with an Al target in mixtures of argon and nitrogen.
Comparison of the methods for deposition of AlN
Sputter-System (Lesker) | Sputter-System Metal-Nitride(PC3) | ALD2 | |
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Generel description |
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Stoichiometry |
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Film Thickness |
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Deposition rate |
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Step coverage |
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Process Temperature |
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Substrate size |
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Allowed materials |
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Further process information can be found here:
- AlN deposition using ALD2
- Deposition conditions and acceptance test results for sputter deposition of AlN in the Sputter-System Metal-Nitride(PC3).
- For further information on AlN deposition using the sputter systems please contact the Thin Film Group (thinfilm@nanolab.dtu.dk). The Sputter-System Metal-Nitride(PC3) was acquired partly to make it possible to deposit high-quality of AlN films.