LabAdviser/314/Microscopy 314-307/SEM/AFEG

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AFEG 250 Analytical ESEM (FEI Quanta FEG 250)

The AFEG is an FEI Quanta FEG 250(Field Emission Gun) scanning electron microscope with a spatial resolution of 2 nm for the ETD detector in high vacuum at 30 keV. The microscope can operate in high vacuum and low vacuum modes at room temperature. Our AFEG is fitted with EDS and WDS detectors, which allows for analytical measurements in all the operation modes.

Process information

  • Electron source

Field emission gun

  • Accelerating voltage

500 V- 30 kV

  • Resolution

2 nm at 30 kV (SE)

  • Imaging detectors

Everhart-Thornley (SE/BSE), Solid State BSE, Large Field, Gaseous SE, Gaseous BSE, Gaseous Analytical, STEM, vCD and CCD Camera

  • Imaging modes

High and low vacuum

  • Analytical capabilities

Energy dispersive X-rays (Oxford Instruments 50 mm2 X-Max silicon drift detector, MnKα resolution at 124 eV) Wavelength Dispersive Spectrosopy

Equipment performance and process related parameters

Equipment FEI QFEG 200 Cryo ESEM
Purpose Vizualization and Microanalysis
  • Vizualization of surfaces (topography and Z contrast)
  • Vizualization of projected image (BF STEM image)
  • Energy Dispersive X-ray analysis (EDS)
  • Wavelength Dispersive Spectrosopy (WDS)
Performance Resolution The resolution of AFEG depends on the sample and the operation mode!
  • 2 nm at 30 keV for Au on C sample with the ETD detector
Instrument specifics Detectors
  • ETD- Everhart-Thornley for secondary electrons
  • BSD- Solid state Back Scattered Detector
  • LFD- Large Field Detector for secondary electrons
  • GSED- Gaseous Secondary Electron Detector
  • GBSD- Gaseous Backscattered Electron Detector
  • GAD- Gaseous Analystical Detector
  • STEM- right field Scanning Tramission Electron detector
  • vCD- low voltage BSED
  • CCD camera
Electron source
  • Field Emission - Tungsten filament
Stage (room temperature)
  • X, Y: 25 × 25 mm
  • T: 0 to 60o
  • R: 360o
WDS
  • Oxford Instruments WDS
EDS
  • Oxford Instruments 80 mm2 X-Max silicon drift detector, MnKα resolution at 124 eV
Operating pressures
  • High vacuum (10-4 Pa), Low vacuum (10 to 200Pa)
Substrates Sample sizes
  • No actual limit (limitted by stage movment and detector position).
Allowed materials
  • Conductors, Semiconductors,Insulators, Prepared Biological


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