Quantitative electron microscopy of 2D materials

Project type: Ph.D project
Project responsible: Anton Bay Andersen
Supervisors: Thomas Willum Hansen, Tim Booth, Shima Kadkhodazadeh
Partners involved: DTU Physics

Project description

In this project 2D semiconductors, transition metal dichalcogenides, will be characterized both spatially and spectrally using state‐of‐the‐art scanning electron microscopy and aberration corrected transmission electron microscopy. The research is focused on quantitative electron microscopy with atomic accuracy to examine both the atomic structure of the 2D materials, devices made of stacks of these materials and spectral properties of these structures (electronic structure excitations). These results will come from STEM/STEM‐EELS and TEM experiments designed and performed often prepared with the in‐situ lift-out method. The expected outcomes of the experiments are information of the atomic structure of the 2D materials and the effect of how stacking and patterning affect the structure along with the electronic structure.

Further information

Description how to prepare a FIB lamella in the FEI Helios Dualbeam: [CLICK]