Specific Process Knowledge/Thermal Process/Oxidation/Standard oxidation recipes
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Recipes for dry oxidation
Dry oxidation of silicon wafers can be done in these furnaces:
- A1 Boron Drive-in and Pre-dep
- A2 Gate Oxide
- A3 Phosphorus Drive-in
- C1 Anneal Oxide
- C3 Anneal Bond
- C4 Al-Anneal
The recipes for dry oxidation are very similar on these furnaces.
The oxidation and annealing times
Steps in the dry oxidation recipes
- STANDBY
Message: "Standby" Temperature: 700 C N2 flow: 3 SLM Furnace closed
The user has to press "Start" (on the touch screen or furnace computer) to start the recipe.
It a dry oxidation recipe is aborted, it will jump to the "Standby" step.
- LM-LOCK
Message: "Standby" The recipe can only continue, if a user is logged on in LabManager
- OPEN
Message: "Boat moving" The furnace opens
- LOAD
Message: "Load wafers Wafers are loaded in furnace.
The user has to press "Start" (on the touch screen) or "Continue" (on the furnace computer) to close the furnace
Dry oxidation of III-V samples can be done in the C2 III-V Oxidation furnace, more information can be found here:
Dry oxidation of silicon and other materials can be done in the Multipurpose Anneal furnace and the Noble furnace, but there are not really any standard recipes on these furnaces.