Specific Process Knowledge/Etch/Aluminum Oxide

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Etching Al₂O₃ can be done both chemically (wet) and by dry etching. Chemical etching can be done using HF or a developer. The last has not been tested. This will be selective to most materials not containing Al. Do expect a slow and isotropic etch rate of about 1-2 nm/min. We have done some test of Al₂O₃ in dry etching. It has been mostly tested in the III-V ICP and ICP Metal. Please see links below.

• Al₂O₃ etch using ICP metal
• Al₂O₃ etch using III-V ICP
• Al₂O₃ etch using HF