Specific Process Knowledge/Thin film deposition/Deposition of Copper

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Deposition of Cu

Copper can be deposited by e-beam evaporation, sputtering or electroplating. In the chart below you can compare the different deposition equipments.

	E-beam evaporation (Temescal)	Sputter deposition (Lesker)
General description	E-beam deposition of Cu (line-of-sight deposition)	Sputter deposition of Cu (not line-of-sight deposition)
Pre-clean	Ar ion bombardment	RF Ar clean
Layer thickness	10Å to 1µm*	10Å to 1µm**
Deposition rate	1Å/s to 10Å/s	~1Å/s
Batch size	Up to 4x6" wafers Up to 3x8" wafers (ask for holder) smaller pieces	smaller pieces Up to 1x6" wafers
Allowed materials	Silicon Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar Metals See also the cross-contamination sheet	Silicon Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals
Comment	As of August 2018, Cu has not yet been deposited in this machine. Contact the Thin Film group to develop a process.

** To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@danchip.dtu.dk)

* To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@danchip.dtu.dk)

Roughness of Cu layers - Roughness of Cu layers deposited with Alcatel