Specific Process Knowledge/Thin film deposition/Temescal
Feedback to this page: click here
THIS PAGE IS UNDER CONSTRUCTION
=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
E Beam Evaporator (Temescal)
The Temescal is a system for depositing metals by electron-beam evaporation. It also has an ion source for in-situ Argon sputtering that can be used either for cleaning samples prior to deposition or to modify the film during deposition. Wafers are loaded into the top of the chamber, which acts as a loadlock as it can be separated from the rest of the chamber by a large gate valve. Deposition will happen on all samples that are loaded together. You can load up to four 6" wafers or three 8" wafers for line-of sight deposition, or up to one 6" wafer for tilted deposition (smaller samples may be tilted more). By using different sample holder inserts, you can deposit metals on samples of different sizes and shapes. The system contains 6 metals at a time and the metals are exchanged based on user requests, so please request the metals you wish well in advance.
The user manual, user APV, and contact information can be found in LabManager:
E Beam Evaporator (Temescal) in LabManager
Process information
Link to process pages - e.g. one page for each material
Example:
- Etch of silicon using RIE
- Etch of silicon oxide using RIE
- Etch of silicon nitride using RIE
- Etch of photo resist using RIE
| Equipment | Equipment 1 | Equipment 2 | |
|---|---|---|---|
| Purpose |
|
| |
| Performance | Response 1 |
|
|
| Response 2 |
|
| |
| Process parameter range | Parameter 1 |
|
|
| Parameter 2 |
|
| |
| Substrates | Batch size |
|
|
| Allowed materials |
|
| |