Specific Process Knowledge/Thin film deposition/Deposition of Hafnium Oxide

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Deposition of Hafnium Oxide

Thin films of hafnium oxide, HfO₂, can both be deposited both in the ALD1 and the ALD2 (PEALD). However, it is preferred to use the ALD1, as the ALD2 is mainly dedicated for nitride deposition.

More information about hafnium oxide deposition can be found here: for ALD1 and for ALD2 (PEALD).

Only method at the moment for the deposition of hafnium oxide

	ALD
Generel description	Atomic Layer Deposition
Stoichiometry	HfO2
Film Thickness	0 nm - 50 nm
Deposition rate	0.0827 nm/cycle on a flat sample 0.954-0.122 nm/cycle on a high aspect ratio structures
Step coverage	Very good
Process Temperature	150 - 300^oC
Substrate size	Several small samples 1-5 50 mm wafers 1-5 100 mm wafers 1-5 150 mm wafer
Allowed materials	Silicon Silicon oxide, silicon nitride Quartz/fused silica Al, Al₂O₃ Ti, TiO₂ Other metals (use dedicated carrier wafer) III-V materials (use dedicated carrier wafer) Polymers (depending on the melting point/deposition temperature, use carrier wafer)