Specific Process Knowledge/Etch/KOH Etch/ProcessInfo

QC

Quality Control (QC) for the KOH Si etching baths.

Quality Control (QC) for Si Etch 01, and Si Etch 02

The QC procedure for Si Etch: 01 The QC procedure for Si Etch: 01 The newest QC data for KOH2 The newest QC data for KOH3 QC Recipe:   Solution 28 wt% KOH Temperature 80°C Time 90 min Substrate Si (100) Masking No masking QC limits Si Etch 01 Si Etch 02 Etch rate in Si(100) 1.3 ± 0.1 µm/min 1.29 ± 0.06 µm/min Roughness not measured not measured Nonuniformity < 3% < 3%