Specific Process Knowledge/Thin film deposition/Deposition of Aluminium Nitride

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Deposition of Aluminium Nitride

AlN can be either deposited by using sputtering method with AlN target or reactive sputtering method with Al target in mixtures of argon and nitrogen or using atomic layer deposition. AlN film can be deposited by using the Lesker Sputter System or the ALD2.

Comparison of the methods for deposition of Silicon Oxide

Sputter System Lesker ![[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]
Generel description
  • Reactive Sputtering ( 2" Al target)
  • Plasma Enhanced Atomic Layer Deposition
Stoichiometry
  • Not tested

AlN

Film Thickness
  • 0nm - 200nm
  • 0nm - 50nm
Deposition rate
  • Not tested
  • 0.0625 nm/cycle on a flat sample
  • 0.0558 nm/cycle on a high aspect ratio structures
Step coverage
  • Very good
  • Very good
Process Temperature
  • Up to 600oC
  • 350oC
Substrate size
  • chips
  • 1x 100 mm wafer
  • 1x 150 mm wafer
  • Several small samples
  • 1 50 mm wafers
  • 1 100 mm wafers
  • 1 150 mm wafer
Allowed materials
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Any metals
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Al, Al2O3
  • Ti, TiO2
  • Other metals (use dedicated carrier wafer)
  • III-V materials (use dedicated carrier wafer)
  • Polymers (depending on the melting point/deposition temperature, use carrier wafer)

Further process information can be found here: