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AZO can be deposited by Sputtering process and atomic layer deposition (ALD). In the chart below you can compare the different deposition equipment.

	Sputtering deposition (Lesker)	Atomic layer deposition (ALD Picosun R200)
General description	Sputter deposition of AZO	Atomic layer deposition of AZO
Pre-clean	RF Ar clean
Layer thickness	10Å to 5000Å*
Deposition rate	Depending on process parameters.
Batch size	Pieces or 1x4" wafer or 1x6" wafer
Allowed materials	Silicon Silicon oxide Silicon nitride Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals Carbon	Silicon Silicon oxide Silicon nitride Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals Carbon
Comment	Use 2 inch target Substrate rotation Substrate RF Bias (optional)

* For thicknesses above 200 nm permission is required.