Specific Process Knowledge/Thin film deposition/Deposition of AZO

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AZO can be deposited by Sputtering process and atomic layer deposition (ALD). In the chart below you can compare the different deposition equipment.


Sputtering deposition (Lesker) Atomic layer deposition (ALD Picosun R200)
General description Sputter deposition of AZO Atomic layer deposition of AZO
Pre-clean RF Ar clean RF Ar clean
Layer thickness 10Å to 1µm* 10Å to
Deposition rate 2Å/s to 15Å/s ~0.3Å/s
Batch size
  • Up to 1x4" wafers
  • smaller pieces
  • Pieces or
  • 1x4" wafer or
  • 1x6" wafer
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Carbon
Comment

* For thicknesses above 200 nm permission is required.

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