Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch with ICP Metal
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Revision as of 15:08, 20 January 2017 by Bghe (talk | contribs) (→Etch rates in different materials using the standard "Silicon oxide etch with resist mask")
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Parameter | Recipe name: no name yet (testing recipe) |
---|---|
Coil Power [W] | 1200 |
Platen Power [W] | 200 |
Platen temperature [oC] | 0 |
BCl3 flow [sccm] | 60 |
Cl2 flow [sccm] | 30 |
Pressure [mTorr] | 4 |
Material to be etched | Etch rate using the above parameters |
---|---|
Al2O3 |
|