Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch with ICP Metal

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Parameter	Recipe name: SiO2_res (SiO2 etch with resist mask)
Coil Power [W]	1300
Platen Power [W]	200
Platen temperature [oC]	0
He flow [sccm]	174
C4F8 flow [sccm]	5
H2 flow [sccm]	4
Pressure [mTorr]	4

Etch rates in different materials using the standard "Silicon oxide etch with resist mask"

Material to be etched	Etch rate using SiO2_res
Thermal oxide	~230nm/min (5% etch load) - etch load dependency see here 200 nm/min fall 2016 by Martin Lind Ommen @nanotech
TEOS oxide (5% load)	233nm/min ±0.7% - "±" represents the non-uniformity over a 100mm wafer - etched in Marts 2013 by LN/BGE@danchip
PECVD1 (standard) oxide (5% load)	242nm/min ±0.6% - "±" represents the non-uniformity over a 100mm wafer - etched in Marts 2013 by LN/BGE@danchip
Al2O3 from the ALD	34.2 nm/min (1:6 to SiO2) fall 2016 by Martin Lind Ommen @nanotech 50nm can be etched in 10min - See results here etched in November 2014 by FRSTO@danchip
Silicon rich nitride from furnace B2	136nm was etched in 1min (whole wafer) - etched in October 2015 by bghe@danchip
Cr	6 nm/min (1:33 to SiO2) fall 2016 by Martin Lind Ommen @nanotech
Al	18nm/min (1:11 to SiO2) fall 2016 by Martin Lind Ommen @nanotech