Specific Process Knowledge/Lithography/Baking

From LabAdviser

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Comparing baking methods

Hotplate: 90-110C Hotplate 1 and 2 (SU8) Oven 90C Oven: 110C - 250C Oven 250C Small benchtop hotplates Gamma hotplates
Purpose

Programmable contact bake

  • Soft bake
  • PEB

Programmable, ramped contact bake

  • Soft bake of SU-8
  • PEB of SU-8

Manual convection bake

  • Soft bake

Manual convection bake

  • Hard bake
  • Post-exposure bake

Manual convection bake

  • Dehydration

Coming soon.

Coming soon.

Temperature

Maximum 120°C

Maximum 110°C

Fixed at 90°C

110 - 250°C

Return to 110°C after use

Fixed at 250°C

Substrate size
  • 50 mm wafer
  • 100 mm wafer
  • 150 mm wafer
  • pieces
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafer
  • 200 mm wafer
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafers
  • 150 mm wafers
Allowed materials

All substrates

Film or pattern of all types

Silicon, glass, and polymer substrates

Film or pattern of all types except type IV

Silicon, glass, and polymer substrates

Film or pattern of all types

Silicon, glass, and high Tg polymer substrates

Film or pattern of all types

Silicon, glass, and high Tg polymer substrates

Film or pattern of all types except resist

Restrictions
(Not allowed)
III-V, copper, steel substrates

Pb, Te films

III-V, copper, steel substrates III-V, low Tg polymer, copper, steel substrates III-V, low Tg polymer, copper, steel substrates

Resist is not allowed


Hotplates

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Hotplate: 90-110C

Location of Hotplate: 90-110C in C-1

Hotplate: 90-110C is used for baking of 2" - 6" wafers. Do not exceed 120°C.

The user manual, and contact information can be found in LabManager: Hotplate: 90-110C


Hotplate 1 (SU8) and Hotplate 2 (SU8)

Hotplate 1 (SU8) and Hotplate 2 (SU8) situated in C-1

We have two dedicated SU-8 hotplates in C-1.

Users can control the ramp-time, the baking temperature, and the baking time. In order to avoid thermal curing of SU-8 residues on the hotplates, they are temperature limited to 110°C.

The user manual, and contact information can be found in LabManager: Hotplate 1 (SU8) Hotplate 2 (SU8)

Ovens

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Oven 90C

Oven 90C situated in C-1

The oven is mostly used for baking of several wafers at a time at 90 °C as a soft baking step after a spin coating of photoresist. For 1.5µm resist the baking time is 30 min. For most of the other resist thicknesses it is also 30 min.

The user manual, and contact information can be found in LabManager: Oven 90C

Oven: 110C - 250C

Oven: 110C - 250C situated in C-1

Variable temperature convection oven mostly used for baking of wafers as a hard baking step after development of photoresist.

The set-point can be varied, but should always be returned to 110°C after use.

The user manual, and contact information can be found in LabManager: Oven: 110C - 250C

Oven 250C for pretreatment

Oven 250C for pretreatment situated in C-1

See Oven 250C