Jump to content
Main menu
Main menu
move to sidebar
hide
Navigation
Main Page
TPT/Intro Courses
Training Videos
DTU Nanolab Projects
Cleanroom Naming and phones (B346)
Characterization Layout and phones (B314)
Nano Characterization B314/307
Overview DTU Nanolab – building 314/307
Microscopy
Preparation
Safety
Micro/Nano Fabrication B346/347
Pattern Design and Mask Fabrication
Back-end processing
Bonding
Characterization
Direct Structure Definition
Doping
Etch
Imprinting
Lithography
Thermal process
Thin film deposition
Wafer and sample drying
Wafer cleaning
Wafer information
Overview of Fume Hoods
contact
LabAdviser mailbox
Nanolab fabrication contact info
extras
Recent changes
Help
Editor Help
Search
Search
Log in
Personal tools
Log in
Contents
move to sidebar
hide
Beginning
1
Isotropic etching in silicon on the ICP Metal Etch
Toggle the table of contents
Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/isotropic
Page
Discussion
English
Read
View source
View history
Tools
Tools
move to sidebar
hide
Actions
Read
View source
View history
General
What links here
Related changes
Special pages
Printable version
Permanent link
Page information
From LabAdviser
<
Specific Process Knowledge
|
Etch
|
ICP Metal Etcher
|
silicon
Revision as of 09:54, 24 June 2016 by
Jmli
(
talk
|
contribs
)
(
→Isotropic etching in silicon on the ICP Metal Etch
)
(
diff
)
← Older revision
|
Latest revision
(
diff
) |
Newer revision →
(
diff
)
Isotropic etching in silicon on the ICP Metal Etch
Process parameters
Recipe
Step
Temp.
Time
Pres.
Hardware
Gasses
RF powers
Observations
SF
6
O
2
C
4
F
8
Ar
CF
4
H
2
CH
4
BCl
3
Cl
2
HBr
Coil
Platen
SEM images
Keywords
isoslow1
A
20
-
90
-
50
0
0
0
0
0
0
0
0
0
400
3
Click
NA
Toggle limited content width