| Date
|
Substrate Information
|
Process Information
|
SEM Images
|
| Wafer info
|
Mask
|
Material/ Exposed area
|
Tool / Operator
|
Conditioning
|
Recipe
|
Wafer ID
|
Comments
|
| 6/5-2013
|
1/4 1/4 6" ELK stitching 11/1-2013 CB on oxide carrier
|
standard stepper mask (50 nm barc + 320 nm krf)
|
Si / 50%+
|
Pegasus / jmli
|
3min TDESC clean + 30 sec barc etch
|
polySOI5 , 50 cycles or 6:15 minutes
|
S003472
|
|
|
| 16/7-2013
|
1/4 6" ELK stitching 11/1-2013 CB on oxide carrier
|
standard stepper mask (50 nm barc + 320 nm krf)
|
Si / 50%+
|
Pegasus/jmli
|
3 minute TDESC clean + 30 second barc etch
|
jml/SOI3/polySOI-10: 50 cycles or 6:15 minutes
|
S003614
|
lsh: c4f8 etch -> 20
|
|
| 23/8-2013
|
1/4 6" tigre 400 nm pitch pattern CB on oxide carrier
|
standard stepper mask (50 nm barc + 320 nm krf)
|
Si / 50 % in 20*20 mm squares
|
Pegasus / jmli
|
10 minute TDESC clean + 30 second barc etch
|
jml/SOI3/polySOI-10: 100 cycles or 12:30 minutes
|
S003695
|
|
|
| 15/5-2014
|
6" DUV Lithography test pattern
|
standard stepper mask (50 nm barc + 320 nm krf)
|
Si / 50 % in 20*20 mm squares
|
Pegasus / jmli
|
10 minute TDESC clean + 30 second barc etch
|
jml/SOI3/polySOI-10: 50 cycles or 6:15 minutes + 2 mins gentle PR strip
|
S004031
|
|
|
| 28/8-2014
|
6" DUVboxA wafer
|
standard stepper mask (50 nm barc + 320 nm krf)
|
Si / 50%+
|
Pegasus / jmli
|
30 sec barc etch
|
SOI4\polySOI-10 , 70 cycles or 8:45 minutes
|
S004289
|
|
|
| 28/8-2014
|
6" DUVboxB wafer
|
Si/200nm Oxide/1800 nm poly / standard stepper mask (50 nm barc + 320 nm krf)
|
poly / 50%+
|
Pegasus / jmli
|
75 sec barc etch
|
SOI4\polySOI-10 , 20 cycles or 2:30 minutes
|
S004289
|
|
|
| 28/8-2014
|
6" DUVboxB wafer
|
Si/200nm Oxide/1800 nm poly / standard stepper mask (50 nm barc + 320 nm krf)
|
poly / 50%+
|
Pegasus / jmli
|
0 sec barc etch
|
SOI4\polySOI-10 , 30 + 10 cycles or 5:00 minutes
|
S004291 (two processes)
|
S004289 reprocessed, probably overetched -> no spikes
|
|
