Specific Process Knowledge/Etch/DryEtchProcessing/Comparison

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Hardware and option comparison of the dry etchers at Danchip

The table below compares the hardware and the options.

RIE2 ASE AOE DRIE-Pegasus ICP Metal etch III-V RIE III-V ICP
Purpose Primary uses The RIE chamber for etching of:
  • silicon
  • silicon oxides/nitrides

The users are allowed to have 5% metal exposed to the plasma

Formerly the primary silicon etcher; now polymers may also be etched Etching of silicon oxides or nitrides Silicon etching Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs
Alternative/backup uses Shallow silicon etches Backup silicon etcher Barc etch Silicon etcher
General description Plasma source Parallel plate capacitor setup with RF power between the two electrodes Inductively coupled plasma chamber with two RF generators; the coil and platen generator Inductively coupled plasma chamber with two RF generators; the coil and platen generator Inductively coupled plasma chamber with two RF generators; the coil (with outer and inner coil) and platen generator Inductively coupled plasma chamber with two RF generators; the coil and platen generator Parallel plate capacitor setup with RF power between the two electrodes Inductively coupled plasma chamber with two RF generators; the coil and platen generator


Substrate cooling/temperature The electrode is oil cooled: Fixed at 20oC The electrode is oil cooled. Also, Helium backside cooling: -10oC to 20oC The electrode is oil cooled. Also, Helium backside cooling: -10oC to 60oC The electrode is oil cooled. Also, Helium backside cooling: -20oC to 30oC The electrode is oil cooled. Also, Helium backside cooling: -10oC to 50oC The electrode is oil cooled: Fixed at 20oC The electrode is oil cooled with a special chiller. Also, Helium backside cooling: 20oC to 180oC
Clamping No clamping Electrostatic clamping (semco electrode) Electrostatic clamping (TDESC) Electrostatic clamping (TDESC) Electrostatic clamping (TDESC) No clamping Mechanical clamping (weighted clamp with ceramic fingers)
Gasses
SF6 O2 CF4
N2 Ar CHF3
SF6 O2 C4F8
Ar CO2
SF6 O2 C4F8
H2 CF4 He
SF6 O2 C4F8
Ar
SF6 O2 C4F8
Ar CF4 H2
BCl3 Cl2 HBr
O2 CHF3 CH4
Ar H2
SF6 O2 CF4
Ar CH4 H2
HBr BCl3 Cl2
RF generators
  • RF generator
  • Coil generator
  • Platen generator
  • Coil generator
  • Platen generator
  • Coil generator
  • Platen generator
  • Low frequency platen generator
  • Coil generator
  • Platen generator
  • RF generator
  • Coil generator
  • Platen generator
Substrate loading Loading via cluster 2 load lock Loading via dedicated two-slot carousel load lock Loading via dedicated two-slot carousel load lock Loading via dedicated two-slot carousel load lock or via atmospheric cassette loader Loading via dedicated two-slot carousel load lock Manual loading directly into process chamber Loading via dedicated two-slot carousel load lock
Options Optical endpoint detector at fixed wavelength
  • Bosch multiplexing
  • Parameter ramping
  • Bosch multiplexing
  • Parameter ramping
  • SOI option
  • Optical endpoint detection
  • Parameter ramping
  • Optical endpoint detection
  • Laser endpoint detection
  • Parameter ramping
  • Bosch multiplexing
  • Optical endpoint detection
  • Laser endpoint detection
Allowed materials
  • Silicon
  • Fused silica
  • Sapphire
  • SiC
  • Silicon
  • Fused silica
  • Sapphire
  • SiC
  • Silicon
  • Fused silica
  • Sapphire
  • SiC
  • Silicon
  • Fused silica
  • Sapphire
  • SiC
  • Silicon
  • Fused silica
  • Sapphire
  • SiC
  • Silicon
  • Fused silica
  • Sapphire
  • SiC
  • GaAs, GaN, InP, with epitaxial layers
  • Silicon
  • Fused silica
  • Sapphire
  • SiC
  • GaAs, GaN, InP, with epitaxial layers