Specific Process Knowledge/Characterization/SEM Supra 3

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The SEM Supra 3

The user manuals, quality control procedures and results, user APVs, technical information and contact information can be found in LabManager:

SEM's at DTU Danchip:

• The SEM Leo page in LabManager,
• The SEM Supra 1 page in LabManager,
• The SEM Supra 2 page in LabManager,
• The SEM Supra 3 page in LabManager,

Equipment performance and process related parameters

Equipment		SEM Supra 3 (Supra 40VP SEM)
Purpose	Imaging and measurement of	Any sample except bulk insulators such as polymers, glass or quartz wafers
Location		Cleanroom of DTU Danchip
Performance	Resolution	1-2 nm (limited by vibrations) The resolution is strongly dependent on the type of sample and the skills of the operator.
Instrument specifics	Detectors	Secondary electron (Se2) Inlens secondary electron (Inlens) High Definition four quadrant Angular Selective Backscattered electron detector (HDAsB) Variable pressure secondary electron (VPSE)
	Stage	X, Y: 130 × 130 mm T: -4 to 70o R: 360o Z: 50 mm
	Electron source	FEG (Field Emission Gun) source
	Operating pressures	Fixed at High vacuum (2 × 10-4mbar - 10-6mbar) Variable at Low vacuum (0.1 mbar - 2 mbar)
	Options	High Definition four quadrant Angular Selective Backscattered electron detector (HDAsB)
Substrates	Batch size	Up to 6" wafer with full view
	Allowed materials	Any standard cleanroom material