Specific Process Knowledge/Characterization/SEM LEO

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SEM LEO

Picosun R200 ALD, positioned in cleanroom F-2.

A Danchip there are five scanning electron microscopes (SEMs). These SEMs cover a wide range of needs both in the cleanroom and outside: From the fast in-process verification of different process parameters such as etch rates, step coverages or lift-off quality to the ultra high resolution images on any type of sample intended for publication.

The SEM LEO was installed in the cleanroom in the 1998, and the software was ungraded in 2012.

This SEM will cover most users need. It is a very reliable and rugged instrument that provides high quality images of most samples. Excellent images on a large variety of materials such as semiconductors, semiconductor oxides or nitrides, metals, thin films and some polymers may be acquired on the SEM.

The SEM is is equipped with a Raith e-beam writing system.

The user manual, control instruction, the user APV and contact information can be found in LabManager:

SEM LEO info page in LabManager,

Process information

• Standard recipes on the ALD tool
• Results from the ALD acceptance test
• Al₂O₃ deposition using ALD
• TiO₂ deposition using ALD

Equipment performance and process related parameters

Equipment		ALD Picosun R200
Purpose	ALD (atomic layer deposition) of	Al2O3 TiO2 Pt (not tested yet) Please note that it might not be possible to deposit all marials at the same time
Performance	Deposition rates	Al2O3: ~ 0.88 - 0.97 nm/cycle (Using the "Al2O3" recipe, depending of the temperature) TiO2: Not measured Pt: Not measured
	Thickness	Al2O3: 0 - 100 nm TiO2: 0 - 100 nm Pt: ?
Process parameter range	Temperature	Al2O3: 150 - 350 oC TiO2: ? Pt: ?
	Precursors	TMA TiCl4 H2O O3 O2 MeCpPtMe3 (not mounted yet) Please note that not all precursors might be mounted on the tool at the same time
Substrates	Batch size	1-5 100 mm wafers 1-5 150 mm wafers Several smaller samples
	Allowed materials	Silicon Silicon oxide, silicon nitride Quartz/fused silica Al, Al2O3 Ti, TiO2 Other metals (use dedicated carrier wafer) III-V materials (use dedicated carrier wafer) Polymers (depending on the melting point/deposition temperature, use carrier wafer)