Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE blazed gratings

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  • Blazed gratingen in fused silica etched with Cr and DUV resist as masking layer
  • 30min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3 *Rotation speed 0 rpm *Angle: -35 *I(N)=400mA *RF power=1300W *I(B)=300mA *V(B)=300V *V(AC,B)=500V *Ar(N) flow=5sccm *Ar(B) flow=5sccm *CHF3 flow=15sccm
    30min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3
    *Rotation speed 0 rpm
    *Angle: -35
    *I(N)=400mA
    *RF power=1300W
    *I(B)=300mA
    *V(B)=300V
    *V(AC,B)=500V
    *Ar(N) flow=5sccm
    *Ar(B) flow=5sccm
    *CHF3 flow=15sccm
  • 45min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3
    45min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3
  • 20min etch with Krf resist, all resist is gone, used recipe BGHE blazed gratings
    20min etch with Krf resist, all resist is gone, used recipe BGHE blazed gratings
  • 15+30min etch with 50nm Cr mask, used recipe BGHE blazed gratings with CHF3
    15+30min etch with 50nm Cr mask, used recipe BGHE blazed gratings with CHF3
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