Specific Process Knowledge/Doping

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Doping your wafer

This page is about doping your wafer or making a thin film layer doped with boron, phosphorous or Germanium.



Comparison of different doping processes

Phosphorous predep Boron predep PECVD doped thin film Doped Poly Si
Generel description Dopants introduced by diffusion from gas-phase (POCL) Dopants introduced by diffusion from solid source wafers Deposition of doped thin film (oxides or nitrides) Dopants introduced by in-situ doping of poly/amorphous Si
Process Temperature1
  • 900°C - 1150°C
  • 1050°C - 1125°C
  • 300°C
  • 560°C - 620°C
Dopant
  • Phosporous (POCL)
  • Boron (solid source wafers containing B2O3)
  • Phosphorous (PH3)
  • Boron (B2H6)
  • Germane (GeH4)
  • Phosphorous (PH3)
  • Boron (B2H6 or BCl3)
Substrate size
  • 100 mm wafers
  • 100 mm wafers
  • small samples
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafers (Boron and Phosphorous)
  • 150 mm wafers (only Boron)
Allowed materials
  • Silicon
  • Poly/amorphous silicon
  • Oxide
  • Nitride
  • Silicon
  • Poly/amorphous silicon
  • Oxide
  • Nitride
  • Silicon
  • Poly/amorphous silicon
  • Oxide
  • Nitride
  • Silicon
  • Poly/amorphous silicon
  • Oxide
  • Nitride

1 In most cases you need a high temperature step to drive in and redistribute the dopants in the material. This is typically done at 800°C - 1100°C in either high temperature annealing furnaces or by rapid thermal annealing.


Ion implantation

Ion implantation cannot be done at Danchip. IBS offers ion-beam implantation as a service. See more at the homepage of IBS: http://www.ion-beam-services.com/about_us.htm