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The Wet oxidation by Anneal Oxide Furnace(C1) can be used for growing silicon dioxide by using steamer, which gives a very good film uniformity.

Test of the wet oxidation by steamer

Purpose

To study the effect of the process temperature, growth time and steamer flow on the silicon dioxide thinkness and the percent of film non-uniformity.

Experimental setup

The boat was fully filled with dummy wafers, and there are three tested wafers per run. The three tested wafers were placed at slot number 6, 15 and 24. The average silicon dioxide thickness and the percent of film non-uniformity over the boat were calculated form those three test wafers. And the average silicon dioxide thickness and the percent of film non-uniformity over the wafer was calculated from the wafer slot no.15, which was placed in the middle of the boat.

Pressure: Atmosphere

Temperature: 1000, 1050, 1100 C

Time: 15, 180, 360, 720 minutes

Steamer Flow Rate: 10, 17.5, 25 L/min

Anneal: Same as process temperature for 20 minutes with N2: 6 SLM

Test Wafers: N-Type <100> No RCA Clean