Specific Process Knowledge/Lithography/CSAR

From LabAdviser


Resist Polarity Manufacturer Comments Technical reports Spinner Developer Rinse Remover Process flows (in docx-format)
CSAR Positive AllResist Standard positive resist, very similar to ZEP520. Allresist_CSAR62_English.pdf‎,, CSAR_62_Abstract_Allresist.pdf‎ Manual Spinner 1 (Laurell), Spin Coater Labspin X AR 600-54/6, MIBK:IPA IPA, H2O 1165 Remover Process_Flow_CSAR.docx‎


Simple e-beam pattern in this resist has been tested, the results showed on this page. If you have questions to the process or wish to use this e-beam resist, please contact Tine Greibe at tigre@danchip.dtu.dk.


Process Flow

Test of Chemically Semi-Amplified Resist (CSAR); a positive e-beam resist from AllResist (AR-P 6200-2).

Equipment Process Parameters Comments
Pretreatment
4" Si wafers No Pretreatment
Spin Coat
Spin Coater Manual, LabSpin, A-5 AR-P 6200/2 AllResist E-beam resist

60 sec at various spin speed. Acceleration 4000 s-2, softbake 1 - 5 min at 150 deg Celcius

Disposal pipette used; clean by N2-gun before use. Use approximately 1.5 ml per 4" wafer, never use a pipette twice. Softbake is not a crucial step, see e-mail correspondence with AllResist here.
Characterization
Ellipsometer VASE B-1 9 points measured on 100 mm wafer ZEP program used; measured at 70 deg only
E-beam Exposure
JEOL 9500 E-beam writer, E-1 Dosepattern 15nm - 100nm,

dose 120-280 muC/cm2

Virtual chip mark height detection (CHIPAL V1) used in corner of every dose array
Development
Fumehood, D-3 60 sec in X AR 600-54/6,

60 sec rinse in IPA, N2 Blow dry

Gentle agitation while developing. After developing, wafer is immersed in beaker with IPA, subsequently blow dried with N2 gun.
Characterization
Zeiss SEM Supra 60VP, D-3 2-3 kV, shortest working distance possible, chip mounted with Al tape The wafers are diced into smaller pieces and sputter coated with Pt at DTU CEN before SEM inspection; please contact Ramona Valentina Mateiu for further information.


Spin Curves

The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only. 9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.


Dosepattern has been e-beam exposured and SEM inspected on those wafers marked by silver gray.


AllResist AR-P 6200/2 spinning on Spin Coater: Manual LabSpin A-5, TIGRE, 09-04-2014. Softbake 5 min @ 150 degC.
Spin Speed [rpm] Acceleration [1/s2] Thickness [nm] St Dev
2000 4000 225.98 0.97
3000 4000 194.00 0.6
4000 4000 169.57 0.32
5000 4000 151.47 0.26
6000 4000 142.38 0.41
7000 4000 126.59 0.36


AllResist CSAR on Spin Coater: Manual LabSpin A-5, TIGRE, 16-06-2014. Softbake 2 min @ 150 degC.
Spin Speed [rpm] Acceleration [1/s2] Thickness [nm] St Dev
3000 4000 201.61 1.20
4000 4000 173.89 0.64
5000 4000 155.91 0.65


AllResist CSAR 1:1 in anisole, Spin Coater: Manual LabSpin A-5, TIGRE, 16-06-2014. Softbake 2 min @ 150 degC.
Spin Speed [rpm] Acceleration [1/s2] Thickness [nm] St Dev
2000 4000 83.48 0.49
3000 4000 67.12 0.41
4000 4000 58.64 0.44
5000 4000 53.13 0.39
6000 4000 48.76 0.38



Dosetests

So far (September 2014) three wafers with CSAR have been e-beam exposed with dosetests and inspected in SEM. Thickness of resist, e-beam dose and development time has been changed somewhat from wafer to wafer:


Process Equipment Parameters
6.13 4.09 3.05
Resist Fumehood D-3 Resist: AR-P 6200/2 diluted 1:1 in anisole (Bottled opened 16-06-2014 TIGRE) Resist: AR-P 6200/2 diluted 1:1 in anisole (Bottled opened 16-06-2014 TIGRE) Resist: AR-P 6200/2
Spin Coat Spin Coater LabSpin A-5 Spin: 1 min @ 6000 rpm,
softbake: 1 min @ 150 degC,
thickness: ~50nm
(27-08-2014 TIGRE) 		Spin: 1 min @ 5000 rpm,
softbake: 2 min @ 150 degC,
thickness: ~53nm
(16-06-2014 TIGRE) 		Spin: 1 min @ 6000 rpm,
softbake: 5 min @ 150 degC,
thickness: ~143nm
(09-04-2014 TIGRE)
E-beam exposure JEOL 9500 E-2 Condition file: 0.2nA_ap5,
doses: 180-420 muC/cm2,
Shot pitch: 7-27 nm,
PEC: no
(27-08-2014 TIGRE) 		Condition file: 0.2nA_ap5,
doses: 207-242 muC/cm2,
Shot pitch: 5 nm,
PEC: no
(02-07-2014 TIGRE) 		Condition file: 2nA_ap5,
doses: 207-242 muC/cm2,
Shot pitch: 5 nm,
PEC: no
(10-04-2014 TIGRE)
Develop Fumehood D-3 Developer: SX-AR 600-54/6,
time: 30 sec,
Rinse: 30 sec in IPA
(28-08-2014 TIGRE) 		Developer: SX-AR 600-54/6,
time: 60 sec,
Rinse: 30 sec in IPA
(08-07-2014 TIGRE) 		Developer: SX-AR 600-54/6,
time: 60 sec,
Rinse: 60 sec in IPA
(April/May-2014 TIGRE)
Sputter Coat Cressington 208HR, DTU CEN 3-5 nm Pt, sputtering (29-08-2014 TIGRE) 3-5 nm Pt, sputtering (09-07-2014 TIGRE) 3-5 nm Pt, sputtering (22-05-2014 TIGRE)
Characterization Zeiss SEM Supra 60VP, D-3 Acc voltage: 3 kV,
WD: < 4mm,
conducting tape close to pattern (29-08-2014 TIGRE) 		Acc voltage: 3 kV,
WD: < 4mm,
conducting tape close to pattern (09-07-2014 TIGRE) 		Acc voltage: 2 kV,
WD: < 4mm,
conducting tape close to pattern (06-06-2014 TIGRE)




Etch Tests

The tests presented here are prelimenary results and this page will be updated regularly. I post this as the interest in etch resistance of CSAR is increasing; if you have wafers or chips you would like to have tested, please send me an [email].


Recipe nano1.42
Recipe Gasses C4F8 75 sccm, SF6 38 sccm
Pressure 4 mTorr,

Strike: 3 secs @ 15 mTorr

Power 800 W Coil Power,

40 W Platen Power

Temperature -20 degs
Hardware ? Conditions Conditioning Pre-clean: 10 min oxygen clean

5 min oxygen clean between runs

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