Specific Process Knowledge/Thin film deposition/Deposition of Tantalum

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Tantalum can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.


E-beam evaporation (Alcatel) Sputter (Lesker)
General description E-beam deposition of Ta Sputter deposition of Ta
Pre-clean RF Ar clean RF Ar clean
Layer thickness 10Å to 1µm* 10Å to
Deposition rate 2Å/s to 15Å/s ~0.3Å/s
Batch size
  • Up to 1x4" wafers
  • smaller pieces
  • Pieces or
  • 1x4" wafer or
  • 1x6" wafer
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Carbon
Comment

* For thicknesses above 200 nm permission is required.

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