Specific Process Knowledge/Thermal Process/Annealing

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Annealing

At Danchip we have three furnaces and an RTP (Rapid thermal annealing) that can be used annealing: C1, C3, Noble furnace and Jipelec RTP. Annealing normally takes place in an N2 atmosphere. PECVD PBSG glass is annealed in a wet atmosphere which will also oxidize the silicon substrate.

The recipes for oxidation are made so that a 20 minutes N2 annealing step is included after the oxiation step.

Comparison of the annealing furnaces

C1: Anneal Oxide

C3: Anneal Bond

Noble furnace

Jipelec RTP

General description Annealing of 6" wafers. Annealing of wafers from the LPCVD furnaces and PECVD1. Annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum. Annealing of almost materials on silicon wafer. Rapid thermal annealing
Annealing gas
  • N2
  • N2
  • Ar
  • Wet annealing with bobbler (water steam + N2)
  • N2
  • Ar
  • N2
  • Vacuum is possible
Process temperature
  • 700 oC - 1100 oC
  • 700 oC - 1150 oC
  • 20 oC - 1000 oC
  • 20 oC - 1000 oC
  • Ramp up to 300 C/min
Substrate and Batch size
  • 1-30 50 mm wafers
  • 1-30 100 mm wafers
  • 1-30 150 mm wafers
  • Small samples on carrier wafer, horizontal
  • 1-30 50 mm wafers
  • 1-30 100 mm wafers
  • Small samples on carrier wafer, horizontal
  • 1-25 50 mm wafers
  • 1-25 100 mm wafers, vertical and horizontal
  • Small samples on carrier wafer
  • One 100 mm wafers on carrier wafer
Allowed materials
  • All processed wafers have to be RCA cleaned.
  • Except for wafers from LPCVD furnaces and PECVD1.
  • All processed wafers have to be RCA cleaned.
  • Except for wafers from EVG-NIL, PECVD3 and wafer for annealing of aluminum.
  • Almost all materials, permission is need.
  • III-V samples
  • Silicon wafer
  • Some metals