Specific Process Knowledge/Thin film deposition/Deposition of Silicon

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PolySilicon can be sputtered in Alcatel and be deposited in the PolySilicon furnace. In the chart below you can compare the two different deposition methodes:


Sputter(PVD co-sputter/evaporation) Furnace PolySi (Furnace LPCVD pSi) Sputter (Wordentec) Sputter (IBE/IBSD Ionfab 300) Sputter (Alcatel)
Batch size
  • 4x 6" wafers or
  • 4x 4" wafers or
  • 4x 2" wafers
  • 1-25 wafers of 4"
  • For other sizes ask the ThinFilm group
  • 24x 2" wafers or
  • 6x 4" wafers or
  • 6x 6" wafers
  • Several small samples mounted with capton tape
  • 1x 50 mm wafer
  • 1x 100 mm wafer
  • 1x 150 mm wafer
  • 1x 200 mm wafer
  • Up to 1x4" wafers
  • smaller pieces
Pre-clean RF Ar clean RCA clean for wafers that are not fresh form the box. RF Ar clean . RF Ar clean
Layer thickness 10Å to about 3000Å ~50Å to 2µm, if thicker layers are needed please ask the furnace team. 10Å to about 3000Å . 10Å to 2000Å
Deposition rate Dependent on process parameters, but in the order of 1 Å/s. See more here
  • undoped, boron doped:~100Å/min
  • Phospher doped:~20Å/min
.

Dependent on process parameters, but in the order of 1 Å/s. See more here.

About 6-8 nm/min. See more here. 2Å/s to 15Å/s
Process temperature Option: heating wafer up to 400 deg C 560 oC (amorph) and 620 oC (poly) ? . ?
Step coverage . Good . . Poor
Adhesion . Good for fused silica, silicon oxide, silicon nitride, silicon . . Bad for pyrex, for other materials we do not know
Allowed substrates Pyrex, fused silica, silicon, metals, oxide, nitride Fused silica, Silicon, oxide, nitride Pyrex, fused silica, silicon, metals, oxide, nitride .
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
Allowed material
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
Doping facility None Can be doped during deposition with Boron and/or Phosphorous None . None
Comment This process is not running really stable nowadays.


Sputtered Silicon in the Alcatel

The parameter(s) changed New value(s) Deposition rate
Standard parameters None
Power 400W 3.8 Å/s

Sputtered Silicon in the PVD co-sputter/evaporation

See this page: Si sputter in PVD co-sputter/evaporation

Sputtered Silicon in Wordentec

See this page: Si sputter in Wordentec