Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide

From LabAdviser

Slow etch of SiO2 with resist as masking material - using a 6" carrier wafer with recess

This recipe can be used for slow etching of SiO2 with resist as masking material. Here are some test results presented.

Parameter Resist mask
Coil Power [W] 200
Platen Power [W] 25
Platen temperature [oC] 0
CF4 flow [sccm] 20
H2 flow [sccm] 10
Pressure [mTorr] 3


Results Test on wafer with 50% load (Travka 50), by BGHE @danchip
Etch rate of thermal oxide 44.1 nm/min (50% etch load) (01-02-2014)
Selectivity to resist [:1] ~0.9
Wafer uniformity (100mm) ±1.6% (01-02-2014)
Profile [o] Take a look at the images but be aware that the resist profile was not good to begin with.
Wafer uniformity map (click on the image to view a larger image)
Contour plot of the etch rate over the wafer, 9 points measured
SEM profile images