Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy

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The Leo SEM
The FEI SEM
The Jeol SEM is located outside the cleanroom in the basement

Scanning electron microscopy at Danchip

The SEM's at Danchip cover a wide range of needs both in the cleanroom and outside: From the fast in-process verification of different process parameters such as etch rates, step coverages or lift-off quality to the ultra high resolution images on any type of sample intended for publication.

The 'workhorse' SEM that will cover most users needs is the Leo SEM. It is a very reliable and rugged instrument that provides high quality images of most samples. Excellent images on a large variety of materials such as semiconductors, semiconductor oxides or nitrides, metals, thin films and some polymers may be acquired on the Leo SEM. As such, we prefer that new users that have no prior SEM experience get trained on the Leo SEM before they start using the other SEM's.

The Zeiss SEM and the Supra 60 VP SEM are both 'Supra VP' models from Carl Zeiss (a 40 and 60 respectively). As such they share a lot of similaritites but they also differ in some respects. The SmartSEM operator software installed on both these SEM's is also running on the Leo. This is very convenient as it allows the users to shift between instruments quite easily.

The Zeiss SEM was installed in the cleanroom in 2010 and quickly became the 'Weapon of choice' for many SEM users. It's a state-of-the-art SEM that will produce excellent images on any sample. The possibility of operating at higher chamber pressures in the VP mode makes imaging of bulk non-conducting samples possible.

The Supra 60 VP SEM is basically the same as the Zeiss SEM but with some additional features such as an airlock and an EDX detector.

The FEI SEM is a versatile microscope with two vacuum modes (High Vacuum and Low Vacuum) and 6 different detectors, offering excellent resolution on any type of sample or material including graphene and carbon nanotubes. Somewhat more fragile compared to the robust Leo, it is our intention that only users with special needs (for instance thick polymers, glass substrates or EDX/micromanipulator experiments) that will be trained.

Outside the cleanroom in the basement of building 346, the Jeol SEM provides a possibilty of imaging samples that do not go into the cleanroom.

The user manuals, quality control procedures and results, user APVs, technical information and contact information can be found in LabManager:

Process information

Equipment performance and process related parameters

Equipment SEM Leo SEM Zeiss SEM Supra 60VP SEM FEI SEM Jeol
Model Leo 1550 SEM Zeiss Supra 40 VP Zeiss Supra 60 VP FEI Nova 600 NanoSEM Jeol JSM 5500 LV
Purpose Imaging and measurement of
  • Any (semi)conducting sample that may have thin (> ~ 5 µm) layers of non-conducting materials on top
  • Any sample except bulk insulators such as polymers, glass or quartz wafers
  • Any sample except bulk insulators such as polymers, glass or quartz wafers TEST
  • All samples
  • Bulk insulators such as polymer-, glass or quartz wafers
  • Samples from the 'real' world outside the lab
Performance Resolution The resolution of a SEM is strongly dependent on the type of sample and the skills of the operator. The highest resolution is probably only achieved on special samples
  • ~ 5 nanometers (limited by vibrations)
  • 1-2 nm (limited by vibrations)
  • 1-2 nm (limited by vibrations)
  • 1-2 nm (limited by vibrations)
  • 20 nm (limited by instrument)
Instrument specifics Detectors
  • Secondary electron (Se2)
  • Inlens secondary electron (Inlens)
  • Backscatter electron (QBSD)
  • Secondary electron (Se2)
  • Inlens secondary electron (Inlens)
  • Backscatter electron (QBSD)
  • Variable pressure secondary electron (VPSE)
  • Secondary electron (Se2)
  • Inlens secondary electron (Inlens)
  • Backscatter electron (QBSD)
  • Variable pressure secondary electron (VPSE)
  • Secondary electron (ETD)
  • Inlens secondary electron (TLD)
  • Backscatter electron (BSD)
  • Variable pressure secondary electron (LVD)
  • High resolution varable pressure secondary (Helix)
  • Secondary electron (SEI)
  • Backscatter electron (BEI)
Stage
  • X, Y: 125 × 100 mm
  • T: 0 to 90o
  • R: 360o
  • Z: 48 mm
  • X, Y: 130 × 130 mm
  • T: -4 to 70o
  • R: 360o
  • Z: 50 mm
  • X, Y: 150 × 150 mm
  • T: -10 to 70o
  • R: 360o
  • Z: XXX mm
  • X, Y: 150 × 150 mm
  • T: -10 to 60o
  • R: 360o
  • Z: 10 mm
  • X, Y: 73 × 40 mm
  • T: -10 to 90o
  • R: 360o
  • Z: 38 mm
Electron source
  • FEG (Field Emission Gun) source
  • FEG (Field Emission Gun) source
  • FEG (Field Emission Gun) source
  • FEG (Field Emission Gun) source
  • Tungsten filament
Operating pressures
  • Fixed at High vacuum (2 × 10-5mbar - 10-6mbar)
  • Fixed at High vacuum (2 × 10-4mbar - 10-6mbar)
  • Variable at Low vacuum (0.1 mbar-2 mbar)
  • Fixed at High vacuum (2 × 10-4mbar - 10-6mbar)
  • Variable at Low vacuum (0.1 mbar-2 mbar)
  • Fixed at High vacuum (2 × 10-4mbar - 10-6mbar)
  • Variable at Low vacuum (0.1 mbar-2 mbar)
  • Fixed at High vacuum
Substrates Sample sizes
  • Wafers up to 6" (only full view up to 4")
  • Up to 6" wafer with full view
  • Up to 8" wafer with 6" view
  • Up to 6" wafer with full view
  • A 12" wafer holder has been made but it requires special training
  • Up to 4" wafer
Allowed materials
  • Any standard cleanroom material except graphene or CNT samples
  • Any standard cleanroom material except graphene or CNT samples
  • Any standard cleanroom material except graphene or CNT samples
  • Any standard cleanroom material including graphene or CNT samples
  • Any standard cleanroom material including graphene or CNT samples
  • Biological samples