Specific Process Knowledge/Etch/Etching of SU-8

Etching of SU-8

SU-8 can be etched by a oxygen plasma with a small amount of SF₆ to remove the antimony present from the photo initiator. Etching of SU-8 has been developed on the ASE and was tested as a mask less reduction of pattern defined by photo lithography. Two processes are available, a high and a low anisotropic etch for use as etching or thinning of structures.

• High anisotropic etch: etch rate ~400nm/min, anisotropy ~0.8
• Low anisotropic etch: etch rate ~180nm/min, anisotropy ~0.3