Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch): Difference between revisions
No edit summary |
No edit summary |
||
| Line 14: | Line 14: | ||
* '''Shallolr''': The shallow etch process will etch a 2 <math>\mu</math>m opening down to make a 20 <math>\mu</math>m trench. | * '''Shallolr''': The shallow etch process will etch a 2 <math>\mu</math>m opening down to make a 20 <math>\mu</math>m trench. | ||
* '''Deepetch''': The deep etch process will etch a 50 <math>\mu</math>m opening down to make a 300 <math>\mu</math>m trench. | * '''Deepetch''': The deep etch process will etch a 50 <math>\mu</math>m opening down to make a 300 <math>\mu</math>m trench. | ||
The standardization procedure on the ASE covers these two etches. | |||
== Recipes on the ASE == | |||
=== Shallolr === | |||
The shallolr recipe is designed to etch (1 <math>\mu m - \infty </math>) structures in silicon down | |||
{| border="2" cellpadding="2" cellspacing="1" align="left" | {| border="2" cellpadding="2" cellspacing="1" align="left" | ||
| Line 118: | Line 119: | ||
| 5 s | | 5 s | ||
|} | |} | ||
== Standardization procedure on the ASE == | |||