Specific Process Knowledge/Lithography: Difference between revisions
Line 169: | Line 169: | ||
==Equipment List== | ==Equipment List== | ||
===[[Specific Process Knowledge/Lithography/Pretreatment|Pretreatment]]=== | |||
*[[Specific Process Knowledge/Lithography/Pretreatment|Pretreatment]] | *[[Specific Process Knowledge/Lithography/Pretreatment|Pretreatment]] | ||
*[[Specific Process Knowledge/Lithography/Coaters|Coaters]] | *[[Specific Process Knowledge/Lithography/Pretreatment|Pretreatment]] | ||
*[[Specific Process Knowledge/Lithography/Pretreatment|Pretreatment]] | |||
===[[Specific Process Knowledge/Lithography/Coaters|Coaters]]=== | |||
===[[Specific Process Knowledge/Lithography/UVExposure|UV Exposure]]=== | |||
===[[Specific Process Knowledge/Lithography/Baking|Baking]]=== | |||
===[[Specific Process Knowledge/Lithography/Developing|Developing]]=== | |||
===[[Specific Process Knowledge/Lithography/StripLiftOff|Strip, Lift-off]]=== | |||
===[[Specific Process Knowledge/Lithography/WaferCleaning|Wafer Cleaning]]=== | |||
===[[Specific Process Knowledge/Lithography/Characterization|Characterization]]=== | |||
===[[Specific Process Knowledge/Lithography/LaserWriter|LaserWriter]]=== | |||
===[[Specific Process Knowledge/Lithography/DUVStepper|DUV Stepper]]=== | |||
===[[Specific Process Knowledge/Lithography/EBeamLithography|E-Beam Lithography]]=== | |||
===[Specific Process Knowledge/Lithography/NanoImprintLithography|NanoImprint Lithography]]=== | |||
===[[Specific Process Knowledge/Lithography/3D|3D]]=== |
Revision as of 10:56, 30 May 2013
THIS PAGE IS UNDER CONSTRUCTION
Feedback to this page: click here
Available lithography methods at Danchip
There are a broad varity of lithography methods at Danchip. The methods are compared here to make it easier for you to compare and choose the one that suits your needs.
Comparing lithography methods at Danchip
UV Lithography | DUV Lithography | E-beam Lithography | Imprint Lithography | Two photon polymerization Lithography | |
---|---|---|---|---|---|
Generel description | Generel description - method 1 | Generel description - method 2 | 3 | 4 | 5 |
Pattern size range |
|
|
|
|
|
Resist type |
|
|
|
|
|
Resist thickness range |
|
|
|
|
|
Typical exposure time |
2s-30s pr. wafer |
?-? pr. ? |
Depends on dose (in units of muC/cm2), estimate exposure time on sheet 2 of e-beam logbook |
? pr. wafer |
? pr. µm2 |
Substrate size |
|
|
We have cassettes that fit to
Only one cassette can be loaded at time |
|
|
Allowed materials |
|
|
|
|
|