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| <br clear="all" /> | | <br clear="all" /> |
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| ===Nitride Etch data===
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| {| border="2" cellspacing="0" cellpadding="4" align="left"
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| !
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| ! Nitride Etch @ 180 <sup>o</sup>C
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| ! Nitride Etch @ 160 <sup>o</sup>C
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| |-
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| |'''General description'''
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| Etch/strip of silicon nitride
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| Etch/strip of silicon nitride
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| |-
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| |'''Link to safety APV and KBA'''
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| |[http://www.labmanager.danchip.dtu.dk/d4Show.php?id=1892&mach=130 see APV here]
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| [http://kemibrug.dk/KBA/CAS/108568/?show_KBA=1&portaldesign=1 see KBA here]
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| |[http://www.labmanager.danchip.dtu.dk/d4Show.php?id=1892&mach=130 see APV here]
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| [http://kemibrug.dk/KBA/CAS/108568/?show_KBA=1&portaldesign=1 see KBA here]
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| |-
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| |'''Chemical solution'''
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| |H<sub>3</sub>PO<sub>4</sub> (85 wt%)
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| |H<sub>3</sub>PO<sub>4</sub> (85 wt%)
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| |-
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| |'''Process temperature'''
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| |180 <sup>o</sup>C
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| |160 <sup>o</sup>C
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| |-
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| |'''Possible masking materials'''
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| *Thermal oxide (converted si-rich surface)
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| *LPCVD-oxide (TEOS)
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| *PECVD-oxide
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| *Thermal oxide (converted si-rich surface)
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| *LPCVD-oxide (TEOS)
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| *PECVD-oxide
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| |-
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| |'''Etch rate'''
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| *~85 Å/min (stoichiometric Si<sub>3</sub>N<sub>4</sub>)
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| *~60 Å/min (Si-rich Si<sub>3</sub>N<sub>4</sub>)
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| *~30 Å/min (annealed Si-rich Si<sub>3</sub>N<sub>4</sub>)
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| *~4 Å/min (Thermal oxide)
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| *~26 Å/min (Si-rich Si<sub>3</sub>N<sub>4</sub>)
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| |-
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| |'''Selectivity R<sub>Si<sub>3</sub>N<sub>4</sub></sub> / R<sub>SiO<sub>2</sub></sub>'''
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| |~20
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| |The selectivity (sirich nitride:oxide) is higher at 160 <sup>o</sup>C than at 180 <sup>o</sup>C
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| |-
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| |'''Batch size'''
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| 1-25 wafers at a time
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| 1-25 wafer at a time
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| |-
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| |'''Size of substrate'''
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| 2-6" wafers
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| 2-6" wafers
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| |-
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| |'''Allowed materials'''
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| *Silicon
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| *Silicon nitrides
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| *Silicon oxides
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| *Silicon
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| *Silicon nitrides
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| *Silicon oxides
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| |-
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| |}
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| ==Comparison of Wet Silicon Nitride Etch== | | ==Comparison of Wet Silicon Nitride Etch== |
