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Specific Process Knowledge/Etch/Wet Silicon Nitride Etch: Difference between revisions

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Kabi (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Generel description
!Generel description
Etch/strip of silicon nitride
|Etch/strip of silicon nitride
|
|Etch/strip of silicon nitride
Etch/strip of silicon nitride
|-
|-


|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Etch rate range
!Link to safety APV and KBA
|
|[http://www.labmanager.danchip.dtu.dk/d4Show.php?id=1892&mach=130 see APV here]
*~?nm/min
[http://kemibrug.dk/KBA/CAS/108568/?show_KBA=1&portaldesign=1 see KBA here]
|
|[http://www.labmanager.danchip.dtu.dk/d4Show.php?id=1892&mach=130 see APV here]
*~30nm/min (not tested yet)  
[http://kemibrug.dk/KBA/CAS/108568/?show_KBA=1&portaldesign=1 see KBA here]
|-
|-style="background:WhiteSmoke; color:black"
!Chemical solution
|H<sub>3</sub>PO<sub>4</sub>    (85 wt%)
|H<sub>3</sub>PO<sub>4</sub>    (85 wt%)
|-
|-
 
|-style="background:LightGrey; color:black"
!Process temperature
|180 <sup>o</sup>C
|160 <sup>o</sup>C
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Etch profile
|'''Possible masking materials'''
|
|
*Isotropic
*Thermal oxide (converted si-rich surface)
*LPCVD-oxide (TEOS)
*PECVD-oxide
|
|
*Anisotropic (angles sidewalls, typical around 70 dg)
*Thermal oxide (converted si-rich surface)
*LPCVD-oxide (TEOS)
*PECVD-oxide
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Masking material
!Etch rate
|
|
*None (only used for stripping Pt)
*~85 Å/min (stoichiometric Si<sub>3</sub>N<sub>4</sub>)
*~60 Å/min (Si-rich Si<sub>3</sub>N<sub>4</sub>)
*~30 Å/min (annealed Si-rich Si<sub>3</sub>N<sub>4</sub>)
*~4 Å/min (Thermal oxide)
|
|
*Any material that is allowed in the chamber, photoresists included
*~26 Å/min (Si-rich Si<sub>3</sub>N<sub>4</sub>)
|-
|-style="background:WhiteSmoke; color:black"
!Selectivity R<sub>Si<sub>3</sub>N<sub>4</sub></sub> / R<sub>SiO<sub>2</sub></sub>
|~20
|The selectivity (sirich nitride:oxide) is higher at 160 <sup>o</sup>C than at 180 <sup>o</sup>C
|-
|-
 
|-style="background:LightGrey; color:black"
 
!Batch size
|
1-25 wafers at a time
|
1-25 wafer at a time
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Substrate size
!Size of substrate
|
|
4" wafers
2-6" wafers
|
|
 
2-6" wafers
*<nowiki>#</nowiki>1 50mm wafer
*<nowiki>#</nowiki>1 100mm wafer
*<nowiki>#</nowiki>1 150mm wafer
*<nowiki>#</nowiki>1 200mm wafer
|-
 
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!'''Allowed materials'''
!Allowed materials
|
|
*Silicon  
*Silicon
*Silicon nitrides
*Silicon oxides
*Silicon oxides
|
*Silicon
*Silicon nitrides
*Silicon nitrides
|
*Silicon
*Silicon oxides
*Silicon oxides
*Silicon nitrides
|-
|-
|}
|}
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