Specific Process Knowledge/Etch/Wet Silicon Nitride Etch: Difference between revisions
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*Silicon oxides | *Silicon oxides | ||
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==Comparison of Platinum Etch Methods== | |||
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! | |||
![[Specific Process Knowledge/Etch/Wet Platinum Etch|Pt wet etch]] | |||
![[Specific_Process_Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE (Ionfab300+)]] | |||
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!Generel description | |||
|Wet etch of Pt | |||
|Sputtering of Pt | |||
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!Etch rate range | |||
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*~?nm/min | |||
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*~30nm/min (not tested yet) | |||
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!Etch profile | |||
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*Isotropic | |||
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*Anisotropic (angles sidewalls, typical around 70 dg) | |||
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!Masking material | |||
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*None (only used for stripping Pt) | |||
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*Any material that is allowed in the chamber, photoresists included | |||
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!Substrate size | |||
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*Any size and number that can go inside the beaker in use | |||
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Smaller pieces glued to carrier wafer | |||
*<nowiki>#</nowiki>1 50mm wafer | |||
*<nowiki>#</nowiki>1 100mm wafer | |||
*<nowiki>#</nowiki>1 150mm wafer | |||
*<nowiki>#</nowiki>1 200mm wafer | |||
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!'''Allowed materials''' | |||
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No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals | |||
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*Silicon | |||
*Silicon oxides | |||
*Silicon nitrides | |||
*Metals from the +list | |||
*Metals from the -list | |||
*Alloys from the above list | |||
*Stainless steel | |||
*Glass | |||
*III-V materials | |||
*Resists | |||
*Polymers | |||
*Capton tape | |||
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