Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Si etch: Difference between revisions
| Line 42: | Line 42: | ||
|'''vvv''' | |'''vvv''' | ||
|- | |- | ||
|Etch rate [nm/min] | |Etch rate in Si [nm/min] | ||
|17-18 | |17-18 | ||
|- | |||
|Etch rate in Silicon nitride (low stress) | |||
|9.1nm/min (2013-05-27 BGHE and Matthias F. Carnoy) | |||
|- | |||
|Etch rate DUV resist | |||
|13.4nm/min (2013-05-27 BGHE and Matthias F. Carnoy) | |||
|- | |||
|} | |} | ||