Specific Process Knowledge/Thin film deposition/Deposition of Nickel: Difference between revisions
| Line 26: | Line 26: | ||
*12x4" wafers or | *12x4" wafers or | ||
*4x6" wafers | *4x6" wafers | ||
| | |||
*1x2" wafer or | |||
*1x4" wafer or | |||
*1x6" wafer | |||
|- | |- | ||
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|RF Ar clean | |RF Ar clean | ||
|RF Ar clean | |RF Ar clean | ||
|None | |||
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|10Å to 1 µm | |10Å to 1 µm | ||
|10Å to 1000 Å | |10Å to 1000 Å | ||
|A few µm to 1500 µm | |||
|- | |- | ||
| Deposition rate | | Deposition rate | ||
| Line 43: | Line 50: | ||
|10Å/s to 15Å/s | |10Å/s to 15Å/s | ||
|About 1Å/s | |About 1Å/s | ||
|About 1 - 1400Å/s | |||
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|- | |- | ||
Revision as of 13:34, 8 May 2013
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Nickel deposition
Nickel can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.
| E-beam evaporation (Alcatel) | E-beam evaporation (Wordentec) | E-beam evaporation (PVD co-sputter/evaporation) | E-beam evaporation (Electroplating-Ni/electrochemical deposition) | |
|---|---|---|---|---|
| Batch size |
|
|
|
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| Pre-clean | RF Ar clean | RF Ar clean | RF Ar clean | None |
| Layer thickness | 10Å to 1µm | 10Å to 1 µm | 10Å to 1000 Å | A few µm to 1500 µm |
| Deposition rate | 2Å/s to 15Å/s | 10Å/s to 15Å/s | About 1Å/s | About 1 - 1400Å/s |
| Comment | Only very thin layers (up to 100nm). |