Specific Process Knowledge/Etch/ICP Metal Etcher/Chromium: Difference between revisions
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===Chromium etch in ICP metal=== | ===Chromium etch in ICP metal=== | ||
The Chromium etch has ONLY been carried out on the following substrate stack: | The Chromium etch has ONLY been carried out on the following substrate stack: | ||
Revision as of 12:21, 3 May 2013
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Chromium etch in ICP metal
The Chromium etch has ONLY been carried out on the following substrate stack: The Chromium is sputter deposited onto a 2" quartz wafer and pattered by e-beam with Zep520A resist. This 2" QZ wafer is bonded with crystal bond to a 65mmx65mm quartz plate with the thickness: 6.35mm. This QZ plate is bonded to a Si wafer.
| Parameter | Cr etch |
|---|---|
| Cl2 (sccm) | 65 |
| O2 (sccm) | 15 |
| Pressure (mTorr) | 15 |
| Coil power (W) | 300 |
| Platen power (W) | 15 |
| Temperature (oC) | 50 (no back side cooling) |
| Spacers (mm) | 100 |
| Etch rate (nm/min) | ~14 |
| Zep520A resist selectivity | ~0.9 |
| Comment | . |