Specific Process Knowledge/Etch/ICP Metal Etcher/Chromium: Difference between revisions

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===Chromium etch===
===Chromium etch in ICP metal===
The Chromium etch has ONLY been carried out on the following substrate stack:
The Chromium etch has ONLY been carried out on the following substrate stack:
The Chromium is sputter deposited onto a 2" quartz wafer and pattered by e-beam with Zep520A resist.
The Chromium is sputter deposited onto a 2" quartz wafer and pattered by e-beam with Zep520A resist.

Revision as of 12:20, 3 May 2013

Chromium etch in ICP metal

The Chromium etch has ONLY been carried out on the following substrate stack: The Chromium is sputter deposited onto a 2" quartz wafer and pattered by e-beam with Zep520A resist. This 2" QZ wafer is bonded with crystal bond to a 65mmx65mm quartz plate with the thickness: 6.35mm. This QZ plate is bonded to a Si wafer.

Cr etch
Parameter Cr etch
Cl2 (sccm) 65
O2 (sccm) 15
Pressure (mTorr) 15
Coil power (W) 300
Platen power (W) 15
Temperature (oC) 50 (no back side cooling)
Spacers (mm) 100
Etch rate (nm/min) ~14
Zep520A resist selectivity ~0.9
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