Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch): Difference between revisions

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== Etching using the dry etch technique AOE (Advanced oxide etch) ==
== Etching using the dry etch technique AOE (Advanced oxide etch) ==
The AOE positioned at DANCHIP is owned by the company Hymite who is a user of the DANCHIP laboratory. The system is free (with charge) to use for every user of the cleanroom but we cannot guarantee this to be the case in the future.
The AOE positioned at DANCHIP is owned by the company Hymite who is a user of the DANCHIP laboratory. The system is free (with charge) to use for every user of the cleanroom but we cannot guarantee this to be the case in the future.
The AOE can be used for etching silicon oxide, silicon (oxy)nitride and Quartz. Look in the manuals for the AOE to see how to operate the machine (you can find the manuals in LabManager [http://labmanager.danchip.dtu.dk/machine/machine_item.aspx?id=19]).
The AOE can be used for etching silicon oxide, silicon (oxy)nitride and quartz. Look in the manuals for the AOE to see how to operate the machine (you can find the manuals in LabManager [http://labmanager.danchip.dtu.dk/machine/machine_item.aspx?id=19]).


== Process information ==
== Process information ==

Revision as of 10:16, 6 December 2007

Etching using the dry etch technique AOE (Advanced oxide etch)

The AOE positioned at DANCHIP is owned by the company Hymite who is a user of the DANCHIP laboratory. The system is free (with charge) to use for every user of the cleanroom but we cannot guarantee this to be the case in the future. The AOE can be used for etching silicon oxide, silicon (oxy)nitride and quartz. Look in the manuals for the AOE to see how to operate the machine (you can find the manuals in LabManager [1]).

Process information


A rough overview of the performance of AOE and some process related parameters

Purpose Dry etch of
  • Silicon oxide
  • Silicon (oxy)nitride
  • Quartz
Performance Etch rates

~0.2-0.6 µm/min

. Anisotropy
  • Typical profiles: 86-90 degrees
. Process pressure
  • ~2-20 mTorr
. Gas flows
  • CFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _4} FFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _8} : 0-40 sccm
  • OFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2} : 0-100 sccm
  • CFFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _4} : 0-100 sccm
  • HFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2} : 0-30 sccm
  • He: 0-500 sccm
  • NFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2} : 0-1000 sccm
Substrates Batch size
  • 1 6" wafer per run (only when the system is setup to 6"
  • 1 4" wafer per run
  • 1 2" wafer per run (needs carrier)
  • Or several smaller pieces (needs carrier)
. Substrate material allowed
  • Silicon with layers of silicon oxide or silicon (oxy)nitride
  • Quartz wafers
. Possible masking material
  • Photoresist/e-beam resist
  • Silicon/PolySi
  • Aluminium