Specific Process Knowledge/Characterization/Sample imaging: Difference between revisions
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== Sample imaging == | == Sample imaging == | ||
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Optical profiler... | Optical profiler... | ||
The main purpose of the optical profiler is 3D imaging of sample surfaces, step height measurements, roughness measurement. | The main purpose of the optical profiler is 3D imaging of sample surfaces, step height measurements, roughness measurement. | ||
The optical profiler provides standard microscope imaging, confocal imaging, confocal profiling, PSI (Phase Shift Interferometry), VSI (Vertical Scanning Interferometry) and high resolution thin film thickness measurement on a single instrument. The main purpose is 3D topographic imaging of surfaces, step height measurements in smaller trenches/holes than can be obtained with standard stylus method, roughness measurements with larger FOV than the AFM, but less horisontal resolution. | The optical profiler provides standard microscope imaging, confocal imaging, confocal profiling, PSI (Phase Shift Interferometry), VSI (Vertical Scanning Interferometry) and high resolution thin film thickness measurement on a single instrument. The main purpose is 3D topographic imaging of surfaces, step height measurements in smaller trenches/holes than can be obtained with standard stylus method, roughness measurements with larger FOV than the AFM, but less horisontal resolution. | ||
SEM... | SEM... | ||
AFM... | AFM... | ||
The AFM is used to study samples with nanoscale structures. The field of view and is very limited, and the scan speed is slow, so it only possible to get information a small part of the sample at a time. The resolution is limited by the tip | The AFM is used to study samples with nanoscale structures. . The field of view and is very limited, and the scan speed is slow, so it only possible to get information a small part of the sample at a time. The resolution is limited by the tip, but it is possible to buy special tips for inspection of high aspect ratio structures. Futhermore, wi | ||
Dektak... | Dektak... | ||
The Dektak is a slylus profiler | The Dektak is a slylus profiler that is used measure. With the Dektak it is also possible | ||
The resolution is limited by the tip | |||
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==Comparison of optical microscope, optical profiler, SEM, AFM and stylus profiler for sample imaging== | |||
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! | |||
![[Specific_Process_Knowledge/Characterization/Optical_microscope|Optical microscopes]] | |||
![[Specific_Process_Knowledge/Characterization/Profiler#Optical_Profiler_.28Sensofar.29|Optical profiler]] | |||
![[Specific_Process_Knowledge/Characterization/SEM:_Scanning_Electron_Microscopy|SEM]] | |||
![[Specific_Process_Knowledge/Characterization/AFM:_Atomic_Force_Microscopy|AFM]] | |||
![[Specific_Process_Knowledge/Characterization/Profiler#Dektak_XTA_new_stylus_profiler|Stylus profiler (Dektak)]] | |||
|- | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
!Generel description | |||
|Optical microscopes | |||
(several) | |||
|Optical profiler | |||
(Sensofar) | |||
|Scanning electron microscope | |||
([[Specific_Process_Knowledge/Characterization/SEM:_Scanning_Electron_Microscopy/Zeiss|Zeiss]], [[Specific_Process_Knowledge/Characterization/SEM:_Scanning_Electron_Microscopy/LEO|LEO]], [[Specific_Process_Knowledge/Characterization/SEM:_Scanning_Electron_Microscopy/FEI|FEI]], [[Specific_Process_Knowledge/Characterization/SEM:_Scanning_Electron_Microscopy/Jeol|JEOL]]) | |||
|Atomic force microscope | |||
(NanoMan) | |||
|Stylus profiler | |||
(Dektak 8, Dektak XTA) | |||
|- | |||
|- | |||
|-style="background:LightGrey; color:black" | |||
!Vertical resolution | |||
| | |||
| | |||
|1-20 nm | |||
depends on what SEM you use | |||
| | |||
| | |||
|- | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
!Horizontal resolution | |||
| | |||
| | |||
|1-20 nm | |||
depends on what SEM you use | |||
| | |||
| | |||
|- | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
!Resolution limited by | |||
|Wavelenght of light | |||
| | |||
|Interaction volume | |||
|Tip shape | |||
|Stylus shape | |||
|- | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
!Field of view | |||
| | |||
| | |||
| | |||
| | |||
| | |||
|- | |||
|- | |||
|-style="background:LightGrey; color:black" | |||
!Probe | |||
|Light | |||
|Light | |||
|Electrons | |||
|Forces | |||
|Contact | |||
|- | |||
|- | |||
|-style="background:LightGrey; color:black" | |||
!xxx | |||
| | |||
| | |||
| | |||
| | |||
| | |||
|- | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
!xxx | |||
| | |||
| | |||
| | |||
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| | |||
|- | |||
|- | |||
|-style="background:LightGrey; color:black" | |||
!xxx | |||
| | |||
| | |||
| | |||
| | |||
| | |||
|- | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
!Batch size | |||
| | |||
*Several small samples | |||
*One 50 mm wafer | |||
*One 100 mm wafer | |||
*One 150 mm wafer | |||
Stage size depends on what microscope you use | |||
| | |||
*Several small samples | |||
*One 50 mm wafer | |||
*One 100 mm wafer | |||
*One 150 mm wafer | |||
| | |||
*Several small samples | |||
*One 50 mm wafer | |||
*One 100 mm wafer | |||
:(not possible to inspect entire wafer in JEOL SEM) | |||
*One 150 mm wafer | |||
:(only Zeiss, LEO and FEI, not possible to inspect entire wafer) | |||
| | |||
*One small sample | |||
*One 50 mm wafer | |||
*One 100 mm wafer | |||
*One 150 mm wafer | |||
| | |||
*One small sample | |||
*One 50 mm wafer | |||
*One 100 mm wafer | |||
*One 150 mm wafer | |||
|- | |||
|- | |||
|-style="background:LightGrey; color:black" | |||
!'''Allowed materials''' | |||
| | |||
*Silicon,silion oxide, silicon nitride | |||
*Quartz, polymers and photoresist | |||
*Metals (except type IV) | |||
*III-V materials | |||
*Graphene and carbon nanotubes | |||
| | |||
*Silicon,silion oxide, silicon nitride | |||
*Quartz, glass | |||
*Polymers and photoresist | |||
*Metals (except type IV) | |||
*III-V materials | |||
*Graphene and carbon nanotubes | |||
| | |||
*Silicon,silion oxide, silicon nitride | |||
*Quartz, glass | |||
*polymers and photoresist (outbaked) | |||
*Metals (except type IV) | |||
*III-V materials | |||
*Graphene and carbon nanotubes | |||
:(Only FEI, use special sample holder) | |||
| | |||
*Silicon,silion oxide, silicon nitride | |||
*Quartz, glass | |||
*Polymers and photoresist | |||
*Metals (except type IV) | |||
*III-V materials | |||
*Graphene and carbon nanotubes | |||
| | |||
*Silicon,silion oxide, silicon nitride | |||
*Quartz, glass | |||
*Polymers and photoresist | |||
*Metals (except type IV) | |||
*III-V materials | |||
*Graphene and carbon nanotubes | |||
|- | |||
|} | |||
<br clear="all" /> | |||
The list of instruments for sample imaging available at Danchip includes 6 [[Specific Process Knowledge/Characterization/Optical microscope|optical microscopes]] , three [[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|scanning electron microscopes]] (SEM's) and an [[Specific Process Knowledge/Characterization/AFM: Atomic Force Microscopy|atomic force microscope]] (AFM). These instruments cover a wide range of applications. | |||
=== The optical microscopes === | |||
There is a lot of [[Specific Process Knowledge/Characterization/Optical microscope|optical microscopes]] scattered around in the cleanroom because they are in great need. They are useful if, for instance, you need to | |||
* inspect the quality of UV exposed photoresist when doing photolithography, | |||
* check for particles on wafers that have been processed in the furnaces or the PECVD's, | |||
* check the quality of KOH etched structures or | |||
* generally verify any in batch process. | |||
Using the different options such as bright/dark field, polarizer or transmitted/reflected light one can find a better signal for a specific need. Some of them have a camera that allows you to capture and store images. | |||
One of the advantages of the optical microscopes is that they provide fast and easy accessible information about any sample without any kind of sample preparation. They do, however, also have some limitations. Since the depth of focus is quite limited, especially at high magnifications, one will experience problems when trying to image strucutures that have been etched more than some 10 µm: One cannot focus on both the top and the bottom at the same time. Another disadvantage is the physical limit to the resolution that makes it impossible to image structures below 1 µm. | |||
=== [[Specific Process Knowledge/Characterization/Profiler#Optical_Profiler_(Sensofar)|The optical profiler (Sensofar)]] === | |||
The optical profiler provides standard microscope imaging, confocal imaging, confocal profiling, PSI (Phase Shift Interferometry), VSI (Vertical Scanning Interferometry) and high resolution thin film thickness measurement on a single instrument. | |||
The main purpose is 3D topographic imaging of surfaces, Step height measurements in smaller trenches/holes than can be obtained with standard stylus method, roughness measurements with larger FOV than the AFM, but less horisontal resolution. | |||
=== The scanning electron microscopes === | |||
Both shortcomings of the optical microscopes mentioned above are addressed by the use of a beam of electrons (as you do in a SEM) instead of light. The depth of focus and the resolution of a [[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|scanning electron microscope]] are at least one order of magnitude better. The list of advantages of a SEM compared to an optical microscope includes: | |||
* Much better depth of focus: Depending on the image setup it may be on the order of milimeters. | |||
* Much better resolution: Down to a few nanometers. | |||
* Much higher magnifications possible: Up to 500.000 times on some samples. | |||
* Quantification: As a metrology instrument the SEM is absolutely necessary. | |||
* The stage: It allows you to image your sample from almost any angle. | |||
* Tunability: One can tune the image in a number of ways in order to enhance topography or material contrast. | |||
* Elemental analysis: The EDX detector allows you to make detailed investigation of the sample composition. | |||
The SEM is, however, much more complicated in terms of | |||
* Operation: You need training and it takes some experience and skill to obtain good images. | |||
* Hardware: In order to work the SEM needs a chamber under vacuum and sophisticated electronics. | |||
* Sample preparation and mounting: You may have to prep your sample in several ways, either coating, cleaving or mounting on specific sample holders. | |||
=== The atomic force microscope === | |||
The [[Specific Process Knowledge/Characterization/AFM: Atomic Force Microscopy|atomic force microscope]] has limited use as a sample imaging instrument. In some cases the resolution of the SEM is not enough: | |||
* Nanometer sized particles on a surface | |||
* If you need to know the exact height (z) of some surface structures. The SEM only measures lateral (x,y) distances precisely. | |||
* Surface roughness |
Revision as of 08:31, 25 April 2013
THIS PAGE IS UNDER CONSTRUCTION
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Sample imaging
A Danchip a number of instruments are available for sample imaging, including a several optical microscopes, an optical profiler, three SEMs (scanning electron micrscopes), an AFM (atomic force microscope) and two stylus profilers (Dektak). These instruments cover wide range of applications.
Optical micrscope... The optical microscopes provide fast and easy information about most samples without any sample preparation. But the resolution is limited by the objectives and the wavelenght of the light. Also the depth of focus is limited, especially at high magnifications.
Optical profiler... The main purpose of the optical profiler is 3D imaging of sample surfaces, step height measurements, roughness measurement.
The optical profiler provides standard microscope imaging, confocal imaging, confocal profiling, PSI (Phase Shift Interferometry), VSI (Vertical Scanning Interferometry) and high resolution thin film thickness measurement on a single instrument. The main purpose is 3D topographic imaging of surfaces, step height measurements in smaller trenches/holes than can be obtained with standard stylus method, roughness measurements with larger FOV than the AFM, but less horisontal resolution.
SEM...
AFM... The AFM is used to study samples with nanoscale structures. . The field of view and is very limited, and the scan speed is slow, so it only possible to get information a small part of the sample at a time. The resolution is limited by the tip, but it is possible to buy special tips for inspection of high aspect ratio structures. Futhermore, wi
Dektak... The Dektak is a slylus profiler that is used measure. With the Dektak it is also possible
The resolution is limited by the tip
Comparison of optical microscope, optical profiler, SEM, AFM and stylus profiler for sample imaging
Optical microscopes | Optical profiler | SEM | AFM | Stylus profiler (Dektak) | |
---|---|---|---|---|---|
Generel description | Optical microscopes
(several) |
Optical profiler
(Sensofar) |
Scanning electron microscope | Atomic force microscope
(NanoMan) |
Stylus profiler
(Dektak 8, Dektak XTA) |
Vertical resolution | 1-20 nm
depends on what SEM you use |
||||
Horizontal resolution | 1-20 nm
depends on what SEM you use |
||||
Resolution limited by | Wavelenght of light | Interaction volume | Tip shape | Stylus shape | |
Field of view | |||||
Probe | Light | Light | Electrons | Forces | Contact |
xxx | |||||
xxx | |||||
xxx | |||||
Batch size |
Stage size depends on what microscope you use |
|
|
|
|
Allowed materials |
|
|
|
|
|
The list of instruments for sample imaging available at Danchip includes 6 optical microscopes , three scanning electron microscopes (SEM's) and an atomic force microscope (AFM). These instruments cover a wide range of applications.
The optical microscopes
There is a lot of optical microscopes scattered around in the cleanroom because they are in great need. They are useful if, for instance, you need to
- inspect the quality of UV exposed photoresist when doing photolithography,
- check for particles on wafers that have been processed in the furnaces or the PECVD's,
- check the quality of KOH etched structures or
- generally verify any in batch process.
Using the different options such as bright/dark field, polarizer or transmitted/reflected light one can find a better signal for a specific need. Some of them have a camera that allows you to capture and store images.
One of the advantages of the optical microscopes is that they provide fast and easy accessible information about any sample without any kind of sample preparation. They do, however, also have some limitations. Since the depth of focus is quite limited, especially at high magnifications, one will experience problems when trying to image strucutures that have been etched more than some 10 µm: One cannot focus on both the top and the bottom at the same time. Another disadvantage is the physical limit to the resolution that makes it impossible to image structures below 1 µm.
The optical profiler (Sensofar)
The optical profiler provides standard microscope imaging, confocal imaging, confocal profiling, PSI (Phase Shift Interferometry), VSI (Vertical Scanning Interferometry) and high resolution thin film thickness measurement on a single instrument.
The main purpose is 3D topographic imaging of surfaces, Step height measurements in smaller trenches/holes than can be obtained with standard stylus method, roughness measurements with larger FOV than the AFM, but less horisontal resolution.
The scanning electron microscopes
Both shortcomings of the optical microscopes mentioned above are addressed by the use of a beam of electrons (as you do in a SEM) instead of light. The depth of focus and the resolution of a scanning electron microscope are at least one order of magnitude better. The list of advantages of a SEM compared to an optical microscope includes:
- Much better depth of focus: Depending on the image setup it may be on the order of milimeters.
- Much better resolution: Down to a few nanometers.
- Much higher magnifications possible: Up to 500.000 times on some samples.
- Quantification: As a metrology instrument the SEM is absolutely necessary.
- The stage: It allows you to image your sample from almost any angle.
- Tunability: One can tune the image in a number of ways in order to enhance topography or material contrast.
- Elemental analysis: The EDX detector allows you to make detailed investigation of the sample composition.
The SEM is, however, much more complicated in terms of
- Operation: You need training and it takes some experience and skill to obtain good images.
- Hardware: In order to work the SEM needs a chamber under vacuum and sophisticated electronics.
- Sample preparation and mounting: You may have to prep your sample in several ways, either coating, cleaving or mounting on specific sample holders.
The atomic force microscope
The atomic force microscope has limited use as a sample imaging instrument. In some cases the resolution of the SEM is not enough:
- Nanometer sized particles on a surface
- If you need to know the exact height (z) of some surface structures. The SEM only measures lateral (x,y) distances precisely.
- Surface roughness