Specific Process Knowledge/Etch/RIE (Reactive Ion Etch): Difference between revisions

@@ Line 35: / Line 35: @@
 |style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Gas flows
 |style="background:WhiteSmoke; color:black"|
-*SF<math>_6</math>: sccm
+*SF<math>_6</math>: 0-130 sccm
-*O<math>_2</math>O: sccm
+*O<math>_2</math>: 0-100 sccm
-*CHF<math>_3</math>: sccm
+*CHF<math>_3</math>: 0-100 sccm
-*CF<math>_4</math>: sccm
+*CF<math>_4</math>: 0-84 sccm
-*H<math>_2</math>: sccm
+*H<math>_2</math>: ?sccm
-*C<math>_2</math>F<math>_6</math>: sccm
+*Ar: 0-145 sccm
+*N<math>_2</math>: 0-100 sccm
+*C<math>_2</math>F<math>_6</math>: 0-24 sccm
 |-
 !style="background:silver; color:black" align="left"|Substrates
@@ Line 57: / Line 59: @@
 |style="background:silver; color:black"|.|| style="background:LightGrey; color:black"|Possible masking material
 |style="background:WhiteSmoke; color:black"|
+*Photoresist/e-beam resist
 *Silicon/PolySi
 *Silicon oxide or silicon (oxy)nitride
 *Aluminium
 *Other metals if the coverage is <5% of the wafer area (ONLY PECVD3!)
-|-
-|style="background:silver; color:black"|.|| style="background:LightGrey; color:black"|Material allowed on the substrate
-|style="background:WhiteSmoke; color:black"|
-*Aluminium
-*All metals < 5% of the substrate coverage (ONLY PECVD3!)
 |-
 |}