Specific Process Knowledge/Etch/RIE (Reactive Ion Etch): Difference between revisions
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|style="background:silver; color:black" |.||style="background:LightGrey; color:black"|Anisotropy||style="background:WhiteSmoke; color:black"| | |style="background:silver; color:black" |.||style="background:LightGrey; color:black"|Anisotropy||style="background:WhiteSmoke; color:black"| | ||
* | *Can vary from isotropic to anisotropic with vertical sidewalls and on to a physical etch were the sidewalls are angled but without etching under the mask. | ||
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|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Process pressure | |style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Process pressure | ||
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*Silicon oxide or silicon (oxy)nitride | *Silicon oxide or silicon (oxy)nitride | ||
*Aluminium | *Aluminium | ||
*Other metals if the coverage is <5% of the wafer area | *Other metals if the coverage is <5% of the wafer area (ONLY PECVD3!) | ||
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|style="background:silver; color:black"|.|| style="background:LightGrey; color:black"|Material allowed on the substrate | |style="background:silver; color:black"|.|| style="background:LightGrey; color:black"|Material allowed on the substrate | ||