Specific Process Knowledge/Etch/Etching of Silicon Nitride: Difference between revisions
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Revision as of 09:27, 22 April 2013
Silicon nitride can be etched using either wet chemistry or dry etch equipment. Wet chemistry is mainly used to remove all the nitride on the surface (backside and frontside) of a wafer. Dry etching etches one side at a time and can be used to etch structures with several masking materials.
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Comparing silicon nitride etch methods at Danchip
There are a broad varity of silicon nitride etch methods at Danchip. The methodes are compared here to make it easier for you to compare and choose the one that suits your needs.
- Wet Silicon Nitride Etch
- Etch of Silicon Nitride using RIE
- Etch of Silicon Nitride using AOE
- IBE/Ion Beam Etching using IBSD Ionfab 300
Compare the methods for Silicon Nitride etching
Wet Silicon Nitride Etch | BHF | RIE (Reactive Ion Etch) | AOE (Advanced Oxide Etch) | IBE/IBSD Ionfab 300 | |
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Generel description |
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Possible masking materials |
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Etch rate range |
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Substrate size |
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Allowed materials |
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